目前市面(mian)上(shang)的电池(chi)(chi)不(bu)(bu)(bu)管是(shi)磷酸(suan)铁(tie)锂电池(chi)(chi)，三元电池(chi)(chi)，还是(shi)钛酸(suan)锂电池(chi)(chi)都离(li)不(bu)(bu)(bu)开(kai)电池(chi)(chi)保(bao)(bao)护板(ban)，有人(ren)问为(wei)什么要(yao)用保(bao)(bao)护板(ban)呢？不(bu)(bu)(bu)用保(bao)(bao)护板(ban)不(bu)(bu)(bu)是(shi)能(neng)省很(hen)多钱(qian)吗(ma)？有这(zhei)样想的客(ke)户也(ye)不(bu)(bu)(bu)奇(qi)怪，因为(wei)他(ta)们不(bu)(bu)(bu)懂锂电池(chi)(chi)，不(bu)(bu)(bu)了(le)解(jie)电池(chi)(chi)的特性，要(yao)是(shi)了(le)解(jie)了(le)锂电池(chi)(chi)你(ni)就会(hui)觉(jue)得这(zhei)个钱(qian)不(bu)(bu)(bu)能(neng)省，这(zhei)是(shi)保(bao)(bao)证电池(chi)(chi)产品安全的最后一道(dao)防线。

　　锂(li)电(dian)(dian)池(chi)近几(ji)年(nian)来(lai)飞速发(fa)展(zhan)，国家也(ye)大力支持新能(neng)源领(ling)域的(de)的(de)开发(fa)，虽(sui)然发(fa)展(zhan)近百(bai)年(nian)了(le)，目前(qian)还暂时没(mei)有(you)材料(liao)能(neng)够保证电(dian)(dian)池(chi)不起火不爆炸，都还需要(yao)(yao)加个(ge)保护板来(lai)保护电(dian)(dian)池(chi)过(guo)(guo)(guo)(guo)(guo)充(chong)、过(guo)(guo)(guo)(guo)(guo)放(fang)(fang)(fang)、过(guo)(guo)(guo)(guo)(guo)流以(yi)及(ji)短路(lu)(lu)，来(lai)实现电(dian)(dian)池(chi)的(de)安(an)全(quan)性(xing)，为什么锂(li)电(dian)(dian)池(chi)这么怕过(guo)(guo)(guo)(guo)(guo)充(chong)过(guo)(guo)(guo)(guo)(guo)放(fang)(fang)(fang)呢？原因在于(yu)在过(guo)(guo)(guo)(guo)(guo)度(du)充(chong)电(dian)(dian)状(zhuang)(zhuang)态(tai)下，电(dian)(dian)池(chi)温度(du)上升后能(neng)量(liang)将过(guo)(guo)(guo)(guo)(guo)剩，于(yu)是(shi)电(dian)(dian)解液分(fen)解而产生气体，因内压(ya)上升而发(fa)生自(zi)燃(ran)或(huo)破裂的(de)危险；反之，在过(guo)(guo)(guo)(guo)(guo)度(du)放(fang)(fang)(fang)电(dian)(dian)状(zhuang)(zhuang)态(tai)下，电(dian)(dian)解液因分(fen)解导(dao)致电(dian)(dian)池(chi)特(te)(te)性(xing)及(ji)耐久性(xing)劣化，从(cong)而降低可(ke)充(chong)电(dian)(dian)次数。锂(li)离子电(dian)(dian)池(chi)的(de)保护电(dian)(dian)路(lu)(lu)就是(shi)要(yao)(yao)确保这样(yang)的(de)过(guo)(guo)(guo)(guo)(guo)度(du)充(chong)电(dian)(dian)及(ji)放(fang)(fang)(fang)电(dian)(dian)状(zhuang)(zhuang)态(tai)时的(de)安(an)全(quan)性(xing)，并防止特(te)(te)性(xing)劣化。

　　锂离子电(dian)(dian)(dian)池的保(bao)(bao)护(hu)(hu)(hu)电(dian)(dian)(dian)路(lu)是由(you)保(bao)(bao)护(hu)(hu)(hu)IC及(ji)两颗功率MOS所(suo)构成，其中(zhong)保(bao)(bao)护(hu)(hu)(hu)IC监视(shi)电(dian)(dian)(dian)池电(dian)(dian)(dian)压(ya)，当有过(guo)(guo)度(du)充(chong)电(dian)(dian)(dian)及(ji)放(fang)电(dian)(dian)(dian)状态时(shi)切断到以外挂的功率MOS来(lai)保(bao)(bao)护(hu)(hu)(hu)电(dian)(dian)(dian)池，保(bao)(bao)护(hu)(hu)(hu)IC的功能有过(guo)(guo)度(du)充(chong)电(dian)(dian)(dian)保(bao)(bao)护(hu)(hu)(hu)、过(guo)(guo)度(du)放(fang)电(dian)(dian)(dian)保(bao)(bao)护(hu)(hu)(hu)和过(guo)(guo)电(dian)(dian)(dian)流及(ji)短路(lu)保(bao)(bao)护(hu)(hu)(hu)（如图1所(suo)示）。

　　过(guo)(guo)充(chong)(chong)(chong)保护：当充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)器再(zai)给电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)时(shi)(shi)，充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)流(liu)向(xiang)是(shi)(shi)(shi)(shi)从P+   B+   B-   P-(如(ru)图2所示)，IC一直在检测电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(ya)，当电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(ya)上(shang)升到4.28V±50mV时(shi)(shi)持续120ms,控制IC就会(hui)在CO口输出(chu)一个低(di)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)(ping)，正(zheng)常情况下CO口是(shi)(shi)(shi)(shi)输出(chu)一个高电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)(ping)，高电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)(ping)变(bian)低(di)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)(ping)从而(er)把(ba)MOS关断(duan)，切(qie)断(duan)充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)回路(lu)，防止电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)继(ji)续充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，（如(ru)图3所示），切(qie)断(duan)回路(lu)后(hou)，因(yin)为(wei)充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)是(shi)(shi)(shi)(shi)浮充(chong)(chong)(chong)的(de)(de)(de)，所以(yi)(yi)当没有(you)充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)后(hou)，电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(ya)会(hui)下降，当这(zhei)时(shi)(shi)接负(fu)载放(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(ya)下降到过(guo)(guo)充(chong)(chong)(chong)恢(hui)复电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(ya)4.08V±50mV时(shi)(shi)，CO会(hui)输出(chu)一个高电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)(ping)，把(ba)充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOS管(guan)打(da)开，如(ru)果(guo)这(zhei)时(shi)(shi)再(zai)接入(ru)充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)器又可以(yi)(yi)继(ji)续充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，有(you)些(xie)人可能(neng)会(hui)有(you)些(xie)疑问？刚(gang)才(cai)不是(shi)(shi)(shi)(shi)说充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOS管(guan)关闭了(le)吗？回路(lu)已(yi)经切(qie)断(duan)了(le)怎(zen)么还(hai)能(neng)放(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)呢(ni)？其实这(zhei)是(shi)(shi)(shi)(shi)MOS管(guan)内部结构问题(ti)，MOS内部有(you)个体二(er)极(ji)管(guan)，二(er)极(ji)管(guan)的(de)(de)(de)方(fang)(fang)向(xiang)跟MOS管(guan)的(de)(de)(de)导通方(fang)(fang)向(xiang)是(shi)(shi)(shi)(shi)相(xiang)反的(de)(de)(de)，同时(shi)(shi)放(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)回路(lu)和充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)回路(lu)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)是(shi)(shi)(shi)(shi)相(xiang)反的(de)(de)(de)，放(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)时(shi)(shi)候，电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)从充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOS管(guan)的(de)(de)(de)体二(er)级管(guan)流(liu)过(guo)(guo)，从而(er)能(neng)够做到过(guo)(guo)充(chong)(chong)(chong)之(zhi)后(hou)还(hai)能(neng)够继(ji)续放(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，但是(shi)(shi)(shi)(shi)设(she)(she)计上(shang)要(yao)处理好这(zhei)个问题(ti)，因(yin)为(wei)体二(er)级管(guan)流(liu)过(guo)(guo)的(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)是(shi)(shi)(shi)(shi)有(you)限(xian)的(de)(de)(de)，不能(neng)长时(shi)(shi)间(jian)大电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)放(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，否则(ze)会(hui)烧坏充(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOS管(guan)，所以(yi)(yi)在电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)设(she)(she)计保护板的(de)(de)(de)时(shi)(shi)候要(yao)考虑好电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)容量(liang)，负(fu)载能(neng)力，以(yi)(yi)及IC的(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压(ya)(ya)保护和恢(hui)复参(can)数，否则(ze)很容易造(zao)成设(she)(she)计缺陷，造(zao)成产品不良，存在安全隐患。

　　过放(fang)(fang)(fang)保(bao)护：当(dang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)给设备供电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)时，放(fang)(fang)(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)流(liu)(liu)向是从B+   P+   P-   B-(如图(tu)4所(suo)示)，IC在放(fang)(fang)(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)过程中会(hui)一直(zhi)在检(jian)测电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压，当(dang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压下降到2.4V±100mV持续60ms以上时,控制IC就会(hui)在DO口输出(chu)一个低电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)，正(zheng)常情况下DO口是输出(chu)一个高电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)，高电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)变低电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)从而把MOS关(guan)断(duan)，切断(duan)放(fang)(fang)(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)回(hui)路(lu)，防(fang)止(zhi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)继(ji)续放(fang)(fang)(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，（如图(tu)5所(suo)示），切断(duan)回(hui)路(lu)后，，没(mei)有放(fang)(fang)(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)后，电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压会(hui)回(hui)升，接充(chong)(chong)(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)器或者电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压回(hui)升到过放(fang)(fang)(fang)恢复电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)压3.0V±100mV时，DO会(hui)输出(chu)一个高电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)，把放(fang)(fang)(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOS管打(da)开，为什么(me)关(guan)断(duan)放(fang)(fang)(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOS之后还能接充(chong)(chong)(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)器充(chong)(chong)(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，原(yuan)理跟上面充(chong)(chong)(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOS一样，充(chong)(chong)(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)与放(fang)(fang)(fang)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)是相反的(de)(de)(de)(de)，而且电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)经过的(de)(de)(de)(de)是MOS管内部的(de)(de)(de)(de)体二(er)极管，所(suo)以能够充(chong)(chong)(chong)(chong)(chong)电(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。

　　过(guo)流(liu)(liu)(liu)(liu)、短(duan)路(lu)(lu)保护(hu)：过(guo)流(liu)(liu)(liu)(liu)和短(duan)路(lu)(lu)保护(hu)意义在于(yu)保护(hu)电(dian)(dian)(dian)(dian)池(chi)大电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)放(fang)电(dian)(dian)(dian)(dian)，大电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)放(fang)电(dian)(dian)(dian)(dian)容(rong)易损坏电(dian)(dian)(dian)(dian)芯内(nei)(nei)部结构(gou)，所以(yi)出(chu)现大电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)放(fang)电(dian)(dian)(dian)(dian)时要切(qie)断(duan)放(fang)电(dian)(dian)(dian)(dian)回路(lu)(lu)，即(ji)保护(hu)了电(dian)(dian)(dian)(dian)池(chi)也(ye)保护(hu)了PCB线路(lu)(lu)，短(duan)路(lu)(lu)也(ye)是大电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)放(fang)电(dian)(dian)(dian)(dian)的一(yi)种(zhong)，在客户使用不当或者主控板失(shi)效的情况出(chu)现大电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)和短(duan)路(lu)(lu)的情况，保护(hu)板能够及时切(qie)断(duan)回路(lu)(lu)，保证产(chan)品(pin)在安全的使用范围。保护(hu)的原理是IC内(nei)(nei)部有一(yi)个固定(ding)的过(guo)流(liu)(liu)(liu)(liu)检测(ce)电(dian)(dian)(dian)(dian)压(ya)(ya)(ya)0.15V和一(yi)个短(duan)路(lu)(lu)保护(hu)电(dian)(dian)(dian)(dian)压(ya)(ya)(ya)1.3V，当电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)流(liu)(liu)(liu)(liu)过(guo)MOS,MOS管(guan)存(cun)在阻抗，MOS管(guan)两端就会产(chan)生(sheng)压(ya)(ya)(ya)降(jiang)，电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)越大压(ya)(ya)(ya)降(jiang)越大，根据U=I*R来计算，例(li)如流(liu)(liu)(liu)(liu)经MOS管(guan)电(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)是5A,MOS管(guan)的阻抗是50mR,那么MOS产(chan)生(sheng)的压(ya)(ya)(ya)降(jiang)为(wei)0.25mV,IC内(nei)(nei)部有个比较器，当电(dian)(dian)(dian)(dian)压(ya)(ya)(ya)大于(yu)设定(ding)的0.15V持续10ms以(yi)上，DO输出(chu)从高电(dian)(dian)(dian)(dian)平变(bian)成低电(dian)(dian)(dian)(dian)平，切(qie)断(duan)放(fang)电(dian)(dian)(dian)(dian)回路(lu)(lu)。

　　综上分析，目前材料(liao)体系下，电芯离不(bu)开保(bao)护(hu)(hu)(hu)板(ban)(ban)，保(bao)护(hu)(hu)(hu)板(ban)(ban)能够保(bao)护(hu)(hu)(hu)电芯安全运转(zhuan)，所(suo)以(yi)不(bu)能为了(le)省这点成本，让电芯失去保(bao)护(hu)(hu)(hu)的(de)(de)功(gong)能，如(ru)果就是因为几(ji)毛钱(qian)的(de)(de)成本，造(zao)成电芯起火爆炸，那么造(zao)成的(de)(de)损失不(bu)是省下来(lai)的(de)(de)这点钱(qian)能补偿回(hui)来(lai)的(de)(de)，切勿(wu)因小失大(da)。

　　友(you)飞翔电子工程师 刘工

　　2018-11-26